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Uluslararası

1

Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric

MORKOÇ BERK, KAHRAMAN AYŞEGÜL, YILMAZ ERCAN , Place of Publication: Materials Chemistry and Physics , 2022

UluslararasıHakemliSCIÖzgün Makalehttps://doi.org/10.1016/j.matchemphys.2022.126875

2

The relationship between structural and electrical properties of the post-deposition annealed Er2O3/n-Si hetero-structures

KAHRAMAN AYŞEGÜL, MORKOÇ BERK, YILMAZ ERCAN , Place of Publication: Materials Science in Semiconductor Processing , 2021

UluslararasıHakemliSCI-ExpandedÖzgün Makalehttps://doi.org/10.1016/j.mssp.2021.105819

3

Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors

MORKOÇ BERK, KAHRAMAN AYŞEGÜL, YILMAZ ERCAN , Place of Publication: Journal of Materials Science: Materials in Electronics , 2021

UluslararasıHakemliSCI-ExpandedÖzgün Makalehttps://doi.org/10.1007/s10854-021-05588-0

4

Dose responses of the SiO2 used in radiation sensors in field effect transistor form

KAHRAMAN AYŞEGÜL, MORKOÇ BERK, YILMAZ OZAN, YILMAZ ERCAN , Place of Publication: Journal of Bionic Memory , 2021

UluslararasıHakemliESJIÖzgün Makalehttps://doi.org/10.53545/jbm.2021175569

Ulusal

1

Evaluatıon of THE RadFet radıatıon sensor Performance ın 18 mv-external beam

MORKOÇ BERK,KAHRAMAN AYŞEGÜL,DİNÇER Yeğen,YILMAZ ERCAN , Place of Publication: Uludağ University Journal of The Faculty of Engineering , 2019

UlusalHakemliTR DİZİNÖzgün Makale

2

Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies

MORKOÇ BERK,KAHRAMAN AYŞEGÜL,AKTAĞ ALİEKBER,YILMAZ ERCAN , Place of Publication: Celal Bayar Üniversitesi Fen Bilimleri Dergisi , 2019

UlusalHakemliTR DİZİNÖzgün Makalehttps://doi.org/10.18466/cbayarfbe.460022